Dislocation Analysis of 3C-SiC Nanoindentation with Different Crystal Plane Groups Based on Molecular Dynamics Simulation

Figure 6

Deformation process of 3C-SiC (110) crystal surface with different indentation depths. (a) 0.9 nm, (b) 1.2 nm, (c) 1.5 nm, (d) 1.8 nm, (e) 2.1 nm, and (f) 2.4 nm.

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