Research Article
Dislocation Analysis of 3C-SiC Nanoindentation with Different Crystal Plane Groups Based on Molecular Dynamics Simulation
Figure 7
Deformation process of 3C-SiC (111) crystal surface with different indentation depths. (a) 0.8 nm, (b) 1.2 nm, (c) 1.6 nm, (d) 2.0 nm, (e) 2.4 nm, and (f) 2.8 nm.
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