Research Article

Dislocation Analysis of 3C-SiC Nanoindentation with Different Crystal Plane Groups Based on Molecular Dynamics Simulation

Table 1

Molecular dynamics simulation parameters.

ParametersValue

Crystal plane group{100}, {110}, {111}
Sample indentation surface(001), (110), (111)
Numbers of atoms in specimen222338, 223080, 242272
Dimensions of specimen
Dimensions of indenter
Numbers of indenter4913
Equilibration temperature900 K
Indenting speed50 m/s
Time step1 fs