Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Figure 4

(a) Dark current–voltage (I–V) characteristics of the pure ZnO and a-IGZO thin films for UV PDs. (b) Photocurrent of pure ZnO and a-IGZO thin films at a wavelength 310 and 370 nm.

(a)

(b)