Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Table 1

Dark current and photocurrent of the pure ZnO and a-IGZO thin films for UV PDs at 310 and 370 nm wavelengths.

Current ()	Pure ZnO	a-IGZO
	2.85 nA	0.112 pA
	0.82 μA	36.3 nA
	1.1 μA	6.6 nA
	385.9
	589.2
	22.53
	166.6