Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

Figure 3

(a) The C-V performance of the rGO device without Au NP incorporation at ±5 V bias. (b) Counterclockwise C-V characteristics of the rGO-capacitor. Voltage bias was from ±1 V to ±7 V, and the voltage range was between -1.5 V and 1.5 V.

(a)

(b)