Research Article

Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

Figure 6

(a) Output (-) characteristics of the rGO-MTFT. (b) Transfer (-) characteristics of the rGO-MTFT with +40 V program or reprogram bias and -40 V erase bias.
(a)
(b)