Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM)

<div>(a) Low-area resistance follows the flow of a PCM tool in the RESET nation at various room temperatures. (b) Low-area resistance is governed by the operation of a PCM tool within the RESET nation (bottom) and the utility of a time-variable temperature profile (top).</div>

Journal of Nanomaterials

fig17

Figure 17

Figure 17: Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM) 