Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM)

<div>The standards of a WRITE activity in PCM. A RESET in PCM device reaches the highest obstruction area by heating the extruded material over the melting.</div>

Journal of Nanomaterials

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Figure 7

Figure 7: Analyzing Characteristics for Two-Step SET Operation Scheme for Improving Write Time in Nanoscale Phase-Change Memory (PCM) 