Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga-N

Table 2

Performance analysis of switching analysis of SCR, MOSFET, IGBT, BJT, DIAC, TRIAC, and SITH.

S. no.	Parameters	SCR	BJT	MOSFET	IGBT	TRIAC	DIAC	SITH
1	Operating frequency	400 to 500 Hz	10KHz	100 kHz	10 kHz	50 to 500 Hz	—	—
2	On state voltage drop	2 volts	2 volts	4-5 volts	3 volts	1 to 2 volts	3 volts	1 to 3 volts
3	Maximum voltage current rating	10 kV/5000 A	2 kV/1000 A	600 V/200 A	1500 V/400 A	500 V/25 A	—	—