Review and Evaluation of Power Devices and Semiconductor Materials Based on Si, SiC, and Ga-N

Table 3

Comparative parameters for switching devices.

S. no.	Parameters	SCR	BJT	MOSFET	IGBT
1	Device used	Minority carrier	Minority carrier	Majority carrier	Minority
2	Voltage or current controlled devices	Current meticulous	Current meticulous	Voltage meticulous	Voltage meticulous
3	Blocking capacity	Symmetrical	Distorted	Distorted	Distorted
4	Temperature coefficient	Negative	Negative	Positive	Flat
5	Commutation circuit	Necessary	Not necessary	Not necessary	Not necessary