Nucleation and Growth of Crystalline Grains in RF-Sputtered TiO₂ Films

Table 1

Parameters for the crystallization at 250^∘C of  TiO₂ thin film: crystallization time 𝑡_𝑐; nucleation rate 𝑟_𝑛; grain growth velocity 𝑠_𝑔; final average grain size 𝑑_𝑔(∞).

Parameter	Value	Units
𝑡𝑐	120±4	s
𝑟𝑛	(1.31±0.11)×10^−9	1/(s⋅nm^3)
𝑠𝑔	2.03±0.09	nm/s
𝑑𝑔(∞)	300±10	nm