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Journal of Nanotechnology
Volume 2009, Article ID 769142, 5 pages
Research Article

Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD

1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2Centre for Emerging Device Technologies, Hamilton, ON, Canada L8S 4L7

Received 21 July 2009; Revised 7 October 2009; Accepted 23 December 2009

Academic Editor: John A. Capobianco

Copyright © 2009 G. Zatryb et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Silicon nanocrystals (Si-nc) embedded in a silicon-rich silicon oxide matrix codoped with ions have been fabricated by electron-cyclotron plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been obtained within a broad pump wavelength range. The influence of different nanocrystal sizes on the excitation transfer from the Si-nc to ions is discussed.