Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanotechnology
Volume 2009 (2009), Article ID 769142, 5 pages
http://dx.doi.org/10.1155/2009/769142
Research Article

Size-Dependent Indirect Excitation of Trivalent Er Ions via Si Nanocrystals Embedded in a Silicon-Rich Silicon Oxide Matrix Deposited by ECR-PECVD

1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
2Centre for Emerging Device Technologies, Hamilton, ON, Canada L8S 4L7

Received 21 July 2009; Revised 7 October 2009; Accepted 23 December 2009

Academic Editor: John A. Capobianco

Copyright © 2009 G. Zatryb et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. F. Priolo, G. Franzò, S. Coffa, and A. Carnera, “Excitation and nonradiative deexcitation processes of Er3+ in crystalline Si,” Physical Review B, vol. 57, no. 8, pp. 4443–4455, 1998. View at Google Scholar · View at Scopus
  2. F. Priolo, G. Franzò, D. Pacifici, V. Vinciguerra, F. Iacona, and A. Irrera, “Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals,” Journal of Applied Physics, vol. 89, no. 1, pp. 264–272, 2001. View at Publisher · View at Google Scholar · View at Scopus
  3. M. Fujii, K. Imakita, K. Watanabe, and S. Hayashi, “Coexistence of two different energy transfer processes in SiO2 films containing Si nanocrystals and Er,” Journal of Applied Physics, vol. 95, no. 1, pp. 272–280, 2004. View at Publisher · View at Google Scholar · View at Scopus
  4. K. Imakita, M. Fujii, and S. Hayashi, “Spectrally resolved energy transfer from excitons in Si nanocrystals to Er ions,” Physical Review B, vol. 71, no. 19, Article ID 193301, 4 pages, 2005. View at Publisher · View at Google Scholar · View at Scopus
  5. A. J. Kenyon, M. Wojdak, I. Ahmad, W. H. Loh, and C. J. Oton, “Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions,” Physical Review B, vol. 77, no. 3, Article ID 035318, 9 pages, 2008. View at Publisher · View at Google Scholar · View at Scopus
  6. M. Wojdak, I. I. Liaw, I. Ahmad et al., “Silicon nanoclusters containing nitrogen and sensitization of erbium luminescence in SiOx:Er,” Materials Science and Engineering B, vol. 146, no. 1–3, pp. 175–178, 2008. View at Publisher · View at Google Scholar · View at Scopus
  7. G. Franzò, E. Pecora, F. Priolo, and F. Iacona, “Role of the Si excess on the excitation of Er doped SiOx,” Applied Physics Letters, vol. 90, no. 18, Article ID 183102, 2007. View at Publisher · View at Google Scholar · View at Scopus
  8. J. H. Shin, S.-Y. Seo, K. Kim, and S. G. Bishop, “Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide,” Applied Physics Letters, vol. 76, no. 15, pp. 1999–2001, 2000. View at Google Scholar · View at Scopus
  9. D. Comedi, O. H. Y. Zalloum, E. A. Irving et al., “X-ray-diffraction study of crystalline Si nanocluster formation in annealed silicon-rich silicon oxides,” Journal of Applied Physics, vol. 99, no. 2, Article ID 023518, 8 pages, 2006. View at Publisher · View at Google Scholar · View at Scopus
  10. C. L. Heng, O. H. Y. Zalloum, J. Wojcik, T. Roschuk, and P. Mascher, “On the effects of double-step anneal treatments on light emission from Er-doped Si-rich silicon oxide,” Journal of Applied Physics, vol. 103, no. 2, Article ID 024309, 2008. View at Publisher · View at Google Scholar · View at Scopus
  11. J. Li, O. H. Y. Zalloum, T. Roschuk, C. L. Heng, J. Wojcik, and P. Mascher, “Light emission from rare-earth doped silicon nanostructures,” Advances in Optical Technologies, vol. 2008, Article ID 295601, 10 pages, 2008. View at Publisher · View at Google Scholar
  12. A. Podhorodecki, J. Misiewicz, J. Wojcik, E. Irving, and P. Mascher, “1.54 μm room temperature emission from Er-doped Si nanocrystals deposited by ECR-PECVD,” Journal of Luminescence, vol. 121, no. 2, pp. 230–232, 2006. View at Publisher · View at Google Scholar
  13. F. Iacona, G. Franzò, and C. Spinella, “Correlation between luminescence and structural properties of Si nanocrystals,” Journal of Applied Physics, vol. 87, no. 3, pp. 1295–1303, 2000. View at Google Scholar · View at Scopus
  14. G. Ledoux, J. Gong, F. Huisken, O. Guillois, and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement,” Applied Physics Letters, vol. 80, no. 25, p. 4834, 2002. View at Publisher · View at Google Scholar · View at Scopus
  15. C. Meier, A. Gondorf, S. Lüttjohann, A. Lorke, and H. Wiggers, “Silicon nanoparticles: absorption, emission, and the nature of the electronic bandgap,” Journal of Applied Physics, vol. 101, no. 10, Article ID 103112, 8 pages, 2007. View at Publisher · View at Google Scholar · View at Scopus
  16. D. Kovalev, J. Diener, H. Heckler, G. Polisski, N. Künzner, and F. Koch, “Optical absorption cross sections of Si nanocrystals,” Physical Review B, vol. 61, no. 7, pp. 4485–4487, 2000. View at Google Scholar · View at Scopus
  17. G. Allan, C. Delerue, and M. Lannoo, “Electronic structure of amorphous silicon nanoclusters,” Physical Review Letters, vol. 78, no. 16, pp. 3161–3164, 1997. View at Google Scholar · View at Scopus
  18. A. Podhorodecki, J. Misiewicz, F. Gourbilleau, and R. Rizk, “Absorption mechanisms of silicon nanocrystals in cosputtered silicon-rich-silicon oxide films,” Electrochemical and Solid-State Letters, vol. 11, no. 3, pp. K31–K33, 2008. View at Publisher · View at Google Scholar · View at Scopus
  19. M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: the role of oxygen,” Physical Review Letters, vol. 82, no. 1, pp. 197–200, 1999. View at Google Scholar · View at Scopus
  20. Y. M. Niquet, C. Delerue, G. Allan, and M. Lannoo, “Method for tight-binding parametrization: application to silicon nanostructures,” Physical Review B, vol. 62, no. 8, pp. 5109–5116, 2000. View at Google Scholar · View at Scopus
  21. A. Podhorodecki, G. Zatryb, J. Misiewicz, J. Wojcik, and P. Mascher, “Influence of the annealing temperature and silicon concentration on the absorption and emission properties of Si nanocrystals,” Journal of Applied Physics, vol. 102, no. 4, Article ID 043104, 2007. View at Publisher · View at Google Scholar · View at Scopus