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Journal of Nanotechnology
Volume 2011 (2011), Article ID 242398, 10 pages
http://dx.doi.org/10.1155/2011/242398
Research Article

Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

1School of Energy Studies, University of Pune, Pune 411 007, India
2Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008, India
3UGC-DAE CSR, University Campus, Khandwa Road, Indore 452 017, India
4Department of Physics, University of Pune, Pune 411 007, India

Received 15 March 2011; Revised 16 April 2011; Accepted 6 May 2011

Academic Editor: Yoke Khin Yap

Copyright © 2011 V. S. Waman et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [14 citations]

The following is the list of published articles that have cited the current article.

  • L. Gao, N. P. Lu, L. G. Liao, A. L. Ji, and Z. X. Cao, “Nanocrystalline Si:H thin films grown at room temperature with plasma-enhanced chemical vapour deposition at a very high pressure,” Journal Of Physics D-Applied Physics, vol. 45, no. 33, 2012. View at Publisher · View at Google Scholar
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