Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

Figure 6

Noncontact atomic force microscopy (NC-AFM) images (topography) of films deposited by hot wire method at various process pressure. (a) 𝑃_𝑝=30 mTorr (a-Si:H). (b) 𝑃_𝑝=90 mTorr (onset of nanocrystallization). (c) 𝑃_𝑝=300 mTorr (nc-Si:H).

(a)

(b)

(c)