Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

<table>Variation of band gap as a function of process pressure for the films deposited by hot wire deposition method. Also, the variation of static refractive index with volume fraction of crystallites is depicted in the figure.</table>

Journal of Nanotechnology

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Figure 9

Figure 9: Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure 