Research Article
Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure
Table 1
Deposition parameters employed for synthesis of Si:H films by hot wire method.
| | Filament temperature () | 1900°C | | Process pressure () | 30–300 mTorr | | Substrate temperature () |
°C | | SiH4 flow rate () | 5 sccm | | Filament to substrate distance () | 6 cm | | Deposition time () | 10 Minutes |
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