Effect of the Thickness of Insulator Polymeric Films on the Memory Behavior: The Case of the Polymethylmethacrylate and the Polystyrene

Table 1

Al/PMMA/Al devices fabricated by using different solvents.

Concentration	Solvent	Thickness	Response	Current (mA); read at 1 V
2.5 mg/mL	CB	7.5 nm	Ohmic	5×10^−2
5 mg/mL	CB	17 nm	WORM with two ON states	5×10^−2 ON1; 10^−3 ON2
10 mg/mL	CB	22 nm	WORM with NDR	10^−3
40 mg/mL	CB	90 nm	WORM	10^−4
60 mg/mL	CB	140 nm	WORM	10^−6
120 mg/mL	CB	250 nm	Insulator	10^−9
0.7 mg/mL	CF	5 nm	Ohmic	5×10^−2
1.5 mg/mL	CF	11 nm	WORM with two ON states	5×10^−2 ON1; 10^−3 ON2
2.5 mg/mL	CF	22 nm	WORM with NDR	10^−3
5 mg/mL	CF	37 nm	WORM	10^−4
20 mg/mL	CF	160 nm	WORM	10^−7
30 mg/mL	CF	300 nm	Insulator	10^−9
4 mg/mL	DMSO	5 nm	Ohmic	5×10^−2
9 mg/mL	DMSO	15 nm	WORM with two ON states	5×10^−2 ON1; 10^−3 ON2
17.5 mg/mL	DMSO	25 nm	WORM with NDR	10^−3
40 mg/mL	DMSO	40 nm	WORM	10^−4