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Journal of Nanotechnology
Volume 2011, Article ID 823680, 4 pages
Research Article

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

1Department of Electrical and Computer Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA
2Advanced Technologies R&D, Brewer Science, Inc., 2401 Brewer Drive, Rolla, MO 65401, USA
311821 Sterling Panorama Ter, Austin, TX 78738, USA
4Omega Optics, 10306 Sausalito Drive, Austin, TX 78759, USA
5Microelectronics Center, University of Texas Austin, 10100 Burnet Road, Austin, TX 78758, USA
6Electrical Engineering, Ingram School of Engineering, Texas State University, San Marcos, TX 78666, USA
7Optomec, Inc., 3911 Singer Boulevard NE, Albuquerque, NM 87109, USA

Received 29 April 2011; Revised 1 July 2011; Accepted 7 July 2011

Academic Editor: Yoke Khin Yap

Copyright © 2011 Guiru Gu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon nanotubes (CNTs) with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103 and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs) due to the special band structure and the one-dimensional (1D) quantum confined density of state (DOS) of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.