Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy
Figure 24
TEM/EDX analysis of GaAs/GaAsP nanowire. (a) Bright-field TEM image and axial/radial EDX line scans on nanowire. Axial plane of wire was exposed with FIB etching. (b) Variations in Ga (green), As (blue), and (red) content for axial line scan no. 1 in (a). (c) Variations in Ga, As, and P content for radial scan no. 2 in (a). Radial EDX scan indicates that GaAs core is surrounded by approximately 50-nm thick GaAsP shell [32].
