Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

Figure 6

(a) Dependence of PL peak position on diameter of nanopillars at RT and (b) at 77 K. Dependence of indium content on diameter of nanopillars (c). Open diamonds stand for band-edge emission of GaAs barrier layer in sample I, open circles for first electron heavy hole excitonic recombination of InGaAs/GaAs QW in sample I, and filled circles for band-edge emission of InGaAs layer in sample II [28].