Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy

<table>PL spectra for three types of heterostructure NWs with a GaAs QW grown for 3, 5, and 8 sec and GaAs NWs (as a reference) measured at 4.2 K. NW pitch was 1 <i>μ</i>m for all the NW samples. Inset is enlarged spectra for the GaAs QWs [<a href="/journals/jnt/2012/169284/#B30">30</a>].</table>

Journal of Nanotechnology

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Figure 9

Figure 9: Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy 