Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy
Figure 10
Flux dependent Raman spectra of Si nanowires collected under poor thermal anchorage (a, c) and good thermal anchorage (b, d) for 23 nm wires (a, b) and 6.0 nm wire (c, d). The nanowires were located on an Indium substrate. (b) Flux dependence of the asymmetry parameter A for Si nanowires under poor thermal contact (solid circles) and good thermal contact (open squares) for (e) 23 nm (f) 6.0 nm Si nanowires [46].
