Research Article
SU-8 as Hydrophobic and Dielectric Thin Film in Electrowetting-on-Dielectric Based Microfluidics Device
Table 2
Working voltage for combination of different dielectric in EWOD.
| S. no. | Dielectric 1 | Dielectric 2 | Voltage | Reference |
| 1 | Parlyene | Teflon | 30–100 V | [2] | 2 | PECVD Oxide | Teflon | 100 V | [12] | 3 | SiO2 | Cytop | 85 Vac | [13] | 4 | Parlyene | Teflon | 80 V | [14] | 5 | Parlyene | Teflon | 110 Vrms | [15] | 6 | SiO2 | Teflon | 25–100 V | [16] | 7 | SiO2 | Teflon | 45 V | [17] | 8 | Parlyene | Teflon | 80–150 Vrms | [18] | 9 | SiO2 | Teflon | 50–200 V | [19] | 10 | SU-8 | — | 70 | Present design |
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