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Journal of Nanotechnology
Volume 2012, Article ID 325732, 13 pages
http://dx.doi.org/10.1155/2012/325732
Research Article

Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

1Functional Nanomaterials, Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraβe 2, 24143 Kiel, Germany
2Multicomponent Materials, Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraβe 2, 24143 Kiel, Germany

Received 18 September 2011; Revised 13 October 2011; Accepted 16 October 2011

Academic Editor: Qihua Xiong

Copyright © 2012 Dawit Gedamu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.