Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips
Table 1
Summary of the TFF approach: Success statistics for a 10 μm sized gap width of resist. From approx.100 chips, 80 were fabricated with a 100% success rate at the optimized photoresist thickness between 850–1200 nm.
Thickness of photoresist
Crack formation (TFF approach)
Crack formation after oxygen plasma etching
≤550 nm
<50%
no
600 nm
>75%
no
650−850 nm
100%, straight and some times λ shaped
no
850–1200 nm
100%, bow shaped cracks
no
≥1200 nm
100%, bow shaped and strongly bended cracks, but delamination of the photoresist takes place
