Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
(a) Comparison of P/E speed between vertical SiNW-based NC-SOncOS and SiN-SONOS, with gate length of 150 nm and wire diameter of 50 nm. (b) Retention characteristics at 85°C for vertical SiNW-based GAA SONOS and NC-SOncOS. (Reprinted with permission from .  IEEE.)
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