Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 16

(a) Retention characteristic at 85°C for JL-SONOS memory device with channel doping of 1 × 10¹⁷ cm⁻³.and 1 × 10¹⁹ cm⁻³. (b) Endurance characteristic at 85°C for JL-SONOS memory device with channel doping of 1 × 10¹⁷ cm⁻³.and 1 × 10¹⁹ cm⁻³. (Reprinted with permission from [45]. [2011] IEEE.)

(a)

(b)