Journal of Nanotechnology / 2012 / Article / Fig 16

Review Article

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 16

(a) Retention characteristic at 85°C for JL-SONOS memory device with channel doping of 1 × 1017 cm−3.and 1 × 1019 cm−3. (b) Endurance characteristic at 85°C for JL-SONOS memory device with channel doping of 1 × 1017 cm−3.and 1 × 1019 cm−3. (Reprinted with permission from [45]. [2011] IEEE.)
492121.fig.0016a
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492121.fig.0016b
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