Journal of Nanotechnology / 2012 / Article / Fig 18

Review Article

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 18

(a) SEM image of a Si nanopillar pattern used for simulating PCE analysis. Pillar parameters are diameter = 200 nm, pitch = 400 nm, and height = 1000 nm; (b) crossectional schematic of axial junction. (Reprinted with permission from [8]. [2010] IEEE.)
492121.fig.0018a
(a)
492121.fig.0018b
(b)

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