Journal of Nanotechnology / 2012 / Article / Fig 5

Review Article

Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 5

(a) A scanning electron microscope (SEM) image of an FUSI gate device after silicidation (440°C, 30 s) and removal of un-reacted Ni in H2SO4:H2O2:H2O solution. (b) Box plots of the 𝑉 t h distribution of measured devices for each split. 𝑉 t h extraction using linear extrapolation was done for over 10 devices in each split.
492121.fig.005a
(a)
492121.fig.005b
(b)

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