A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

<table class="table-group" width="800px"><tr class="fig-image" id="a"><td><img alt="635705.fig.001a" src="https://static.hindawi.com/articles/jnt/volume-2012/635705/figures/635705.fig.001a.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(a) </b>nanoscale multilayers</td></tr></table></td></tr><tr class="fig-image" id="b"><td><img alt="635705.fig.001b" src="https://static.hindawi.com/articles/jnt/volume-2012/635705/figures/635705.fig.001b.jpg"/></td></tr><tr class="fig-caption"><td align="center"><table><tr><td><b>(b) </b>Si NCs embedded in SiO<sub>2</sub></td></tr></table></td></tr></table>

<table>Scheme of the fabricated samples.</table>

Journal of Nanotechnology

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Figure 1

Figure 1: A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping 