A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

<table>SRP carrier concentration in the nanoscale multilayer implanted with As fluence of <svg height="14.5" id="M30" style="vertical-align:-0.3135pt" version="1.1" viewbox="0 0 52.075001 14.5" width="52.075001" xmlns="http://www.w3.org/2000/svg">
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<tspan style="font-size: 12.50px; " x="9.0271664" y="0">×</tspan>
<tspan style="font-size: 12.50px; " x="19.804752" y="0">1</tspan>
<tspan style="font-size: 12.50px; " x="26.056252" y="0">0</tspan>
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<text transform="matrix(1,0,0,-1,-39.64,65.93)">
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<tspan style="font-size: 8.75px; " x="4.3759999" y="0">5</tspan>
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</svg> As/cm<sup>2</sup>.</table>

Journal of Nanotechnology

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Figure 3

Figure 3: A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping 