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Journal of Nanotechnology
Volume 2013, Article ID 302647, 5 pages
Research Article

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2King Abdulaziz University, Jeddah 21589, Saudi Arabia
3Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
4Electric and Computer Engineering Department, King Abdulaziz University, Jeddah 21589, Saudi Arabia

Received 1 July 2013; Accepted 30 July 2013

Academic Editor: Xiao Wei Sun

Copyright © 2013 T. Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured ( cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble.