Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

<table>Peak heights as function of measurement voltage <svg height="15.4" id="M55" style="vertical-align:-3.3907pt" version="1.1" viewbox="0 0 22.75 15.4" width="22.75" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,11.112)"><path d="M730 650l-8 -28q-52 -4 -72 -18t-64 -77q-79 -113 -321 -539h-33l-119 541q-13 59 -29.5 73t-66.5 20l7 28h245l-8 -28l-28 -5q-33 -6 -40.5 -15.5t-0.5 -38.5l102 -450h2q191 320 246 430q21 42 15.5 56t-43.5 19l-31 4l7 28h240z" id="x1D449"></path></g>
<g transform="matrix(.012,-0,0,-.012,12.675,15.187)"><path d="M766 88q-40 -45 -83.5 -72.5t-63.5 -27.5q-39 0 -16 103l49 224q15 68 -10 68q-36 0 -112.5 -78.5t-105.5 -133.5q-27 -101 -38 -165q-35 -4 -77 -18l-6 6q42 153 70 288q12 55 10 78t-19 23q-38 0 -114 -80.5t-101 -131.5q-24 -68 -41 -165q-36 -3 -76 -18l-8 6
q56 202 87 347q7 33 -3 33q-8 0 -31.5 -17.5t-41.5 -35.5l-12 28q42 45 84 72t63 27q44 0 10 -124l-20 -75h2q92 121 193 178q36 21 64 21q62 0 28 -159l-8 -37h2q50 67 103.5 112t94.5 65q39 19 62 19q60 0 23 -156l-45 -189q-9 -39 2 -39q17 0 71 49z" id="x1D45A"></path></g>
</svg>. The insets schematically show the contribution of QDs with different individual localization energies. The shaded areas indicate the energy range that is probed during a single measurement step. The localization energy of each individual QD depends on the dot size and its composition which have not been indicated in the insets separately.</table>

Journal of Nanotechnology

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Figure 6

Figure 6: Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots 