Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation
Figure 2
(a) Typical PL emission from a sample containing Si-NCs (sample A) and Si-NCs and Ag NPs (sample A(Ag)). The inset (a1) shows a SRIM simulation of the Ag (blue circles) and Si (pink squares) implanted materials at 1 and 1.5 MeV, respectively. The inset (a2) shows the absorption spectra for the sample with Ag NPs (sample A(Ag)), (b) PL emission from a sample containing Si-NCs (sample A) and Si-NCs and Au NPs (sample A(Au)-1). The inset (b1) shows a SRIM simulation of the Au (blue circles) and Si (pink squares) implanted material at 1.9 and 1.5 MeV, respectively. The inset (b2) shows the absorption spectra for the sample with Au implantation (sample A(Au)-1). The bar graph in (a1) and (b1) is the concentration profile of the implanted ions calculated from RBS measures. The ion fluencies obtained are 5. atoms/cm2 and atoms/cm2 for the sample with Ag and Au, respectively. In both cases, the excitation wavelength was 355 nm.
