Improving Passivation Process of Si Nanocrystals Embedded in SiO₂ Using Metal Ion Implantation

Table 2

Resume of the process to obtain the samples studied in this work. Si, Ag, and Au implantations were done at 1.5, 1.0, and 1.9 MeV, respectively.

Sample	Implantation	Steps thermal treatment	Thermal treatment
A(Ag)*	Ag	1	600°C for 1 h in RA
A2(Ag)-1*	Ag	1	600°C for 1 h in RA
A2(Ag)-2*	Ag	1	600°C for 1 h in Ar
A(Au)-1*	Au	1	600°C for 1 h in RA
A(Au)-2*	Au	1	1100°C for 1 h in RA
A(Au)-3*	Au	1	1100°C for 1 h in Air

*The samples with metal ion implantation were previously prepared as a sample A or A2 (see Table 1) as indicated in the first letter and number in its label.