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Journal of Nanotechnology
Volume 2013 (2013), Article ID 797964, 4 pages
Research Article

Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2Electric and Computer Engineering Department, King-Abdul-Aziz University, Jeddah 21589, Saudi Arabia

Received 26 June 2013; Accepted 23 July 2013

Academic Editor: John A. Capobianco

Copyright © 2013 Tobias Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We demonstrate a memory effect in self-assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation-doped field-effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs. The hole storage times in the QDs decrease from seconds at 200 K down to milliseconds at room temperature.