Properties of Silicon Dioxide Amorphous Nanopowder Produced by Pulsed Electron Beam Evaporation

Table 2

The centers of the peaks in the spectrum of pulsed cathodoluminescence NP SiO₂ (Figure 6).

Peak, number	Peak centres		Association	References
	nm	eV
1	451.5	2.74	Twofold coordinated silicon centers ≡Si–Si≡	[30]
			Oxygen-deficient centers	[30, 42]
2	513	2.4	Self-trapped exciton	[34]
			Oxygen vacancy related defect	[24]
3	590	2.1	Nonbridging oxygen hole centers (NBOHC) ≡Si–O^•	[43]
			Hydrogen-related defects (the OH group)	[24]
4	618	2.00	Fe^3+ (transition (4G) → (6S))	[31]
			Si nanocluster	[25, 35]
			The nonbridging oxygen hole centers (NBOHC) ≡Si–O^•	[37, 39]
			The quantum confinement effect	[38, 39]
			Defects in the Si oxide/Si interface	[26, 39–41]
5	649	1.91	Nonbridging oxygen hole centers (NBOHC) ≡Si–O^•	[24]
6	683	1.81	≡Si–O–O•	[43]
			Si nanocluster	[24, 25, 36]
7	702	1.76	Si nanocluster	[24, 25, 30, 36]
8	743	1.67	Si nanocluster	[24, 25, 30, 36]
9	795	1.56	Si nanocluster	[25, 36]