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Journal of Nanotechnology
Volume 2017, Article ID 4276506, 4 pages
Research Article

Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

1Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, India
2Vivekananda Global University, Jaipur, India

Correspondence should be addressed to Swati Arora; moc.liamg@41itawsarora

Received 22 December 2016; Revised 28 February 2017; Accepted 2 March 2017; Published 22 March 2017

Academic Editor: Andrey E. Miroshnichenko

Copyright © 2017 Swati Arora et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.