Comparative Analysis of 6T, 7T, 8T, 9T, and 10T Realistic CNTFET Based SRAM

Table 1

Nominal CNTFET parameters used for HSPICE simulation [8].

Device parameters	Default values
The thickness of high- top gate dielectric material ()	4 nm
Gate dielectric constant
Interconnect capacitance	0.22 fF/μm
Physical channel length ()	32 nm
Fermi level of doped CNT source/drain extension region ()	32 nm
Fermi level of the doped S/D tube (Efo)	0.6 eV
Chirality of tube ()
CNT pitch	10 nm
Flatband voltage for n-CNTFET and p-CNTFET ( and )	0 eV and 0 eV
Mean free path in intrinsic CNT ()	200 nm
Mean free path in p+/n+ doped CNT	15 nm
Work function of source/drain metal contact	4.6 eV
CNT work function	veV