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Journal of Nanotechnology
Volume 2017, Article ID 6987430, 6 pages
https://doi.org/10.1155/2017/6987430
Research Article

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

Foundation Department, North China Institute of Science and Technology, Beijing 101601, China

Correspondence should be addressed to Lili Cai; moc.361@c4002ylil

Received 20 November 2016; Accepted 12 January 2017; Published 12 February 2017

Academic Editor: Yongxing Zhang

Copyright © 2017 Lili Cai and Cuiju Feng. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Lili Cai and Cuiju Feng, “Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN,” Journal of Nanotechnology, vol. 2017, Article ID 6987430, 6 pages, 2017. https://doi.org/10.1155/2017/6987430.