Nanobismuth: Fabrication, Optical, and Plasmonic Properties—Emerging Applications

Table 1

The direct growth of Bi nanowires by PVD methods.

Growth technique	Temperature (°C)	Deposition rate (nm/s)	Length (μm)	Diameter (nm)	Growth time (min)	Substrate
Tip growth
RF sputtering	200	0.67	∼10	140	10	Si (111) [88]
RF sputtering	200	0.7	10s	100∼300	10	Transition metal films (Fe, Ni, and Co) and W, Pt, and Au on oxidized Si, Si (111), oxidized Si (100), and fused quartz [86]
RF sputtering and thermal evaporation	110∼140	0.04∼0.12	16 ± 1	500	70∼210	Glass, Si (100), Si (111), and GaAs (100) [38]
RF sputtering	120	0.03∼0.09	3∼16	80∼120	18.5∼55	Si (111) [40]
RF sputtering	RT∼200	0.044∼0.341	3∼40	80∼400	40	Si and glass [41]
Root growth
RF sputtering	120∼160	4	10∼50	171∼1800	4	Glass [87]
RF sputtering	0∼75	0.1∼0.2	0.5∼30	60∼200	4.2∼8.3	Porous vanadium film [39]