Multiple Exciton Generation in Nanostructures for Advanced Photovoltaic Cells

Figure 3

Generation of multiple excitons from highly excited electron-hole pairs. (a) In a bulk semiconductor, the excited electron relaxes to the bandgap. (b) In QD’s impact, ionisation is the inverse of the Auger process, and the rate of this is much larger than that in bulk. It is usually referred to as MEG in QDs, adapted from [6].

(a)

(b)