Research Article

Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

Table 1

Bandgap variation of InSe with different thickness ratios.

Thickness ratioBandgap (eV)
RT70°C100°C

25 : 752.012.042.05
50 : 501.992.022.04
75 : 252.012.032.04