Research Article

Preparation of InSe Thin Films by Thermal Evaporation Method and Their Characterization: Structural, Optical, and Thermoelectrical Properties

Table 2

Bandgap variation of InSe with different annealing temperatures.

Temperature (°C)Bandgap (eV)
25:7550:5075:25

RT2.022.012.03
702.052.022.02
1002.042.042.03