Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

<div><i>I</i><sub>d</sub>-<i>V</i><sub>g</sub> transfer characteristics of symmetrical n-type and p-type GNRFETs for |<i>V</i><sub>d</sub>| = 0.1 V and |<i>V</i><sub>d</sub>| = 1 V.</div>

Journal of Nanotechnology

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Figure 4

Figure 4: Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design 