Research Article
Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design
Table 3
Device parameters of fin field-effect transistors.
| Device parameters | Values (nm) |
| Gate length, Lg | 16 | Top-fin width, Wtop | 8 | Bottom-fin width, Wbottom | 8 | Fin height, Hf | 32 | Effective oxide thickness, EOT | 1 |
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