Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Table 4

Analysis of noise margin of MOSFET-, FinFET-, and GNRFET-based technology.

SRAM characteristics	6T SRAM			8T SRAM
	MOSFET	FinFET	GNRFET	MOSFET	FinFET	GNRFET
SNM (mV)	245	280	300	245	280	300
ASNM (mV)	170	200	215	205	256	340
WSNM (mV)	359	378	390	350	374	380