Research Article

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Table 7

Analysis of power-delay-product of MOSFET-, FinFET-, and GNRFET-based technology.

SRAM characteristics6T SRAM8T SRAM
MOSFETFinFETGNRFETMOSFETFinFETGNRFET

Retention mode (J)5.5 × 10−187.6 × 10−192.2 × 10−198.2 × 10−213.5 × 10−213.1 × 10−21
Access mode (s)7.5 × 10−181.0 × 10−202.9 × 10−191.8 × 10−221.8 × 10−221.5 × 10−22
Write mode (J)5.7 × 10−188.6 × 10−192.0 × 10−195.0 × 10−184.6 × 10−203.7 × 10−19